OPTICAL STUDY OF LITHIUM-DEFECT COMPLEXES IN IRRADIATED SILICON

被引：14

作者：

CHEN, CS ^{[1
]}

CORELLI, JC ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DIV NUCL ENGN,TROY,NY 12181

来源：

关键词：

D O I：

10.1063/1.1662601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2483 / 2489

页数：7

共 24 条

[1] AGGARWAL RL, 1965, PHYS REV A, V138, P882
[2] BARKER TA, 1970, SOLID STATE ELECTRON, V13, P1431
[3] BRELOT A, 1971, RADIATION EFFECTS SE
[4] ELECTRICAL STUDIES OF ELECTRON-IRRADIATED LITHIUM-CONTAINING N-TYPE SILICON
BRUCKER, GJ
[J]. PHYSICAL REVIEW, 1969, 183 (03): : 712 - +
[5] INFRARED SPECTROSCOPY OF DIVACANCY-ASSOCIATED RADIATION-INDUCED ABSORPTION-BANDS IN SILICON
CHEN, CS
CORELLI, JC
[J]. PHYSICAL REVIEW B, 1972, 5 (04): : 1505 - &
[6] CHEN CS, 1972, INT C DEFECTS SEMICO
[7] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
CHENG, LJ
CORELLI, JC
CORBETT, JW
WATKINS, GD
[J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +
[8] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON
CORBETT, JW
MCDONALD, RS
WATKINS, GD
[J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +
[9] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
CORBETT, JW
WATKINS, GD
CHRENKO, RM
MCDONALD, RS
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[10] ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON
CORELLI, JC
OEHLER, G
BECKER, JF
EISENTRA.KJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1787 - &