INFRARED SPECTROSCOPY OF DIVACANCY-ASSOCIATED RADIATION-INDUCED ABSORPTION-BANDS IN SILICON

[1] Chen C. S., 1971, Radiation Effects, V9, P75, DOI 10.1080/00337577108242035

[2] CHEN CS, 1969, B AM PHYS SOC, V14, P395

[3] CHEN CS, 1971, THESIS RENSSELAER PO

[4] EFFECT OF POLARIZED LIGHT ON 1.8-MU, 3.3-MU, AND 3.9-MU RADIATION-INDUCED ABSORPTION BANDS IN SILICON [J]. PHYSICAL REVIEW, 1969, 186 (03): : 816 - &

[5] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[6] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1968, 171 (03): : 856 - +

[7] CHENG LJ, 1968, RADIATION EFFECTS SE

[8] STUDY OF DIVACANCY IN IRRADIATED SILICON USING INFRARED SPECTROSCOPY AND INFRARED PHOTOCONDUCTIVITY MEASUREMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 128 - &

[9] DALY DF, 1970, ALBANY INT C RADIATI

[10] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[1] Chen C. S., 1971, Radiation Effects, V9, P75, DOI 10.1080/00337577108242035

[2] CHEN CS, 1969, B AM PHYS SOC, V14, P395

[3] CHEN CS, 1971, THESIS RENSSELAER PO

[4] EFFECT OF POLARIZED LIGHT ON 1.8-MU, 3.3-MU, AND 3.9-MU RADIATION-INDUCED ABSORPTION BANDS IN SILICON [J]. PHYSICAL REVIEW, 1969, 186 (03): : 816 - &

[5] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[6] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1968, 171 (03): : 856 - +

[7] CHENG LJ, 1968, RADIATION EFFECTS SE

[8] STUDY OF DIVACANCY IN IRRADIATED SILICON USING INFRARED SPECTROSCOPY AND INFRARED PHOTOCONDUCTIVITY MEASUREMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 128 - &

[9] DALY DF, 1970, ALBANY INT C RADIATI

[10] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134