STUDY OF DIVACANCY IN IRRADIATED SILICON USING INFRARED SPECTROSCOPY AND INFRARED PHOTOCONDUCTIVITY MEASUREMENTS

被引：7

作者：

CORELLI, JC

YOUNG, RC

CHEN, CS

机构：

来源：

关键词：

D O I：

10.1109/TNS.1970.4325779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：128 / &

共 18 条

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CORELLI, JC
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[6] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON
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RAMDAS, AK
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CORELLI, JC
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 734 - +
[10] KAPLYANSKII AA, 1964, SPEKTROSKOPIYA, V16, P602