EFFECTS OF IMPURITIES ON RADIATION DAMAGE AND ANNEALING BEHAVIOR OF SI SOLAR CELLS

被引:12
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USAMI, A
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10.1143/JJAP.9.1063
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O59 [应用物理学];
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页码:1063 / +
页数:1
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共 17 条
[1]   PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].
BEMSKI, G .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198
[2]   SPECTRAL RESPONSE OF SOLAR CELLS [J].
DALE, B ;
SMITH, FP .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1377-&
[3]  
EDAGAWA H, 1964, JPN J APPL PHYS, V3, P644
[4]   THERMAL ANNEALING OF PROTON-IRRADIATED SILICON SOLAR CELLS [J].
FARADAY, BJ ;
STATLER, RL ;
TAUKE, RV .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (01) :31-+
[5]   DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].
HALL, RN ;
RACETTE, JH .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&
[6]  
HANNY NB, 1959, SEMICONDUCTORS, P490
[7]  
INUISHI Y, 1962, J PHYS SOC JAPAN S3, V18
[8]  
Junga F. A., 1959, IRE T NUCL SCI, V6, P49
[9]  
LARACH S, PHOTOELECTRONIC MATE, P253
[10]   INFLUENCE OF CO60 GAMMA IRRADIATION ON SURFACE AND BULK RECOMBINATION RATES IN SILICON [J].
LITTLEJO.MA ;
LADE, RW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :305-&