PROPERTIES OF SUBSTITUTIONALLY DISSOLVED MAGNESIUM IN SILICON

被引：8

作者：

LEMKE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 02期

关键词：

D O I：

10.1002/pssa.2210830228

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：637 / 643

页数：7

共 13 条

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[4]

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[5]

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LEMKE, H .

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[7] PROPERTIES OF THE DOPING LEVELS OF MANGANESE AND VANADIUM IN SILICON [J].

LEMKE, H .

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[8] PROPERTIES OF SOME DEFECT COMPLEXES OF GOLD IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02) :473-482

[9] ENERGY-LEVELS AND BINDING-ENERGIES OF ION-PAIRS IN SILICON [J].

LEMKE, H .

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[10]

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