PROPERTIES OF SOME POINT IMPERFECTION COMPLEXES OF ZINC AND SILICON

被引：14

作者：

LEMKE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 01期

关键词：

D O I：

10.1002/pssa.2210720118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：177 / 187

页数：11

共 10 条

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[8]

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[9] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

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