PROPERTIES OF SOME DEFECT COMPLEXES OF GOLD IN SILICON

被引：26

作者：

LEMKE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 75卷 / 02期

关键词：

D O I：

10.1002/pssa.2210750217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：473 / 482

页数：10

共 15 条

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[9] PROPERTIES OF THE DOPING LEVELS OF MANGANESE AND VANADIUM IN SILICON [J].

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