DOPING PROPERTIES OF COBALT IN SILICIUM

被引：12

作者：

LEMKE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 91卷 / 02期

关键词：

D O I：

10.1002/pssa.2210910236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：649 / 659

页数：11

共 9 条

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[6] ENERGY-LEVEL PROPERTIES OF RHODIUM AND IRIDIUM IN SILICON [J].

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :K137-K140

[7] ENERGY-LEVEL PROPERTIES OF COBALT IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :K133-K136

[8]

LEMKE H, 1985, PHYS STAT SOL A, V91

YAU, LD ;

CHAN, WW ;

SAH, CT .

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