ENERGY-LEVEL PROPERTIES OF RHODIUM AND IRIDIUM IN SILICON

被引:3
作者
LEMKE, H
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 02期
关键词
D O I
10.1002/pssa.2210850252
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:K137 / K140
页数:4
相关论文
共 6 条
[1]  
AZIMOV SA, 1975, FIZ TEKH POLUPROV, V9, P2391
[2]  
KARIMOV FR, 1973, FIZ TEKH POLUPROV, V7, P159
[3]   ANOMALY OF THE ION-PAIRS OF FLAT ACCEPTORS WITH MANGANESE IN SILICON [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (02) :K215-K217
[4]   ENERGY-LEVEL PROPERTIES OF COBALT IN SILICON [J].
LEMKE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (02) :K133-K136
[5]   RHODIUM AND IRIDIUM AS DEEP IMPURITIES IN SILICON [J].
LISIAK, KP ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1976, 19 (02) :115-119
[6]   PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].
PALS, JA .
SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145