ENERGY-LEVEL PROPERTIES OF COBALT IN SILICON

被引：9

作者：

LEMKE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 02期

关键词：

D O I：

10.1002/pssa.2210850251

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K133 / K136

页数：4

共 9 条

[1]

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (01) :289-300

[3] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J].

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[4] IMPURITY STATES IN COBALT-DOPED SILICON [J].

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[5]

GRAFF K, 1981, SEMICONDUCTOR SILICO, P331

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[8] INVESTIGATIONS IN COBALT DOPED SILICON BY DLTS AND MOSSBAUER-EFFECT [J].

SCHEIBE, E ;

SCHROTER, W .

PHYSICA B & C, 1983, 116 (1-3) :318-322

[9] THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT COBALT CENTERS IN SILICON [J].

YAU, LD ;

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SAH, CT .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02) :655-662

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