DETERMINATION OF THE COPPER DIFFUSION-COEFFICIENT IN SILICON FROM TRANSIENT ION-DRIFT

We use the transient ion drift in a depletion region of a Schottky barrier to determine ion diffusivities at moderate temperatures. The pulsed reverse bias leads to temperature dependent capacitance transients similar to deep level carrier emission transients. A simple theoretical model to-ether with classical transient signal analysis provide the means to extract the ion diffusion constant. When applied to copper in silicon, diffusion data are obtained in a not yet investigated temperature range (280-400 K) which agree well with both low and high temperature diffusion data.