EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON

被引：67

作者：

OSBURN, CM

RAIDER, SI

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

[2] IBM CORP, E FISHKILL FAC, SYST PROD DIV, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 10期

关键词：

D O I：

10.1149/1.2403265

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1369 / 1376

页数：8

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