Far-infrared magnetospectroscopy of polaron states in self-assembled InAs/GaAs quantum dots -: art. no. 085316

被引:83
作者
Hameau, S
Isaia, JN
Guldner, Y
Deleporte, E
Verzelen, O
Ferreira, R
Bastard, G
Zeman, J
Gérard, JM
机构
[1] Univ Paris 06, Ecole Normale Super, Phys Mat Condensee Lab, CNRS,UMR 8551, F-75231 Paris 05, France
[2] Univ Paris 07, Ecole Normale Super, Phys Mat Condensee Lab, CNRS,UMR 8551, F-75231 Paris, France
[3] MPI, CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble 9, France
[4] CNRS, Lab Photon & Nanostruct, F-92222 Bagneux, France
来源
PHYSICAL REVIEW B | 2002年 / 65卷 / 08期
关键词
D O I
10.1103/PhysRevB.65.085316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the far infrared magneto-optical transitions in self-assembled InAs quantum dots with different. lateral diameters and we show that a purely electronic model is unable to account for the experimental data. We calculate them coupling between the mixed electron-LO-phonon states using the, Frohlich Hamiltonian, from which we determine the polaron states as well as the energies of the dipolar electric transitions. The excellent agreement between the experiments and the calculations obtained for the different samples provides strong evidence that the magneto-optical transitions arise between polaron states and that the electrons and LO phonons experience a strong coupling regime.
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页码:1 / 10
页数:10
相关论文
共 21 条
[1]   PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].
BOCKELMANN, U ;
BASTARD, G .
PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951
[2]   Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].
Fricke, M ;
Lorke, A ;
Kotthaus, JP ;
MedeirosRibeiro, G ;
Petroff, PM .
EUROPHYSICS LETTERS, 1996, 36 (03) :197-202
[3]   Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].
Fry, PW ;
Itskevich, IE ;
Mowbray, DJ ;
Skolnick, MS ;
Finley, JJ ;
Barker, JA ;
O'Reilly, EP ;
Wilson, LR ;
Larkin, IA ;
Maksym, PA ;
Hopkinson, M ;
Al-Khafaji, M ;
David, JPR ;
Cullis, AG ;
Hill, G ;
Clark, JC .
PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736
[4]   GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
GOLDSTEIN, L ;
GLAS, F ;
MARZIN, JY ;
CHARASSE, MN ;
LEROUX, G .
APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101
[5]   Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes [J].
Grandidier, B ;
Niquet, YM ;
Legrand, B ;
Nys, JP ;
Priester, C ;
Stiévenard, D ;
Gérard, JM ;
Thierry-Mieg, V .
PHYSICAL REVIEW LETTERS, 2000, 85 (05) :1068-1071
[6]   Strong electron-phonon coupling regime in quantum dots:: Evidence for everlasting resonant polarons [J].
Hameau, S ;
Guldner, Y ;
Verzelen, O ;
Ferreira, R ;
Bastard, G ;
Zeman, J ;
Lemaître, A ;
Gérard, JM .
PHYSICAL REVIEW LETTERS, 1999, 83 (20) :4152-4155
[7]   Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope [J].
Hasegawa, Y ;
Kiyama, H ;
Xue, QK ;
Sakurai, T .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2265-2267
[8]   Energy relaxation by multiphonon processes in InAs/GaAs quantum dots [J].
Heitz, R ;
Veit, M ;
Ledentsov, NN ;
Hoffmann, A ;
Bimberg, D ;
Ustinov, VM ;
Kopev, PS ;
Alferov, ZI .
PHYSICAL REVIEW B, 1997, 56 (16) :10435-10445
[9]   Density of states and phonon-induced relaxation of electrons in semiconductor quantum dots [J].
Inoshita, T ;
Sakaki, H .
PHYSICAL REVIEW B, 1997, 56 (08) :R4355-R4358
[10]   POLARON INDUCED ANOMALIES IN INTERBAND MAGNETOABSORPTION OF INSB [J].
JOHNSON, EJ ;
LARSEN, DM .
PHYSICAL REVIEW LETTERS, 1966, 16 (15) :655-&