Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope

被引：75

作者：

Hasegawa, Y ^{[1
]}

Kiyama, H ^{[1
]}

Xue, QK ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期

关键词：

D O I：

10.1063/1.121273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatched InAs/GaAs(001) system and its images showing atomic structure on faceted planes were taken in situ by ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215) faceted planes are observed for the 3D islands. Based on the STM images, atomic structural models are proposed for the faceted surfaces. The surface structure of the (113) faceted planes we propose is different from those observed on the flat GaAs(113) surface. (C) 1998 American Institute of Physics.

引用

页码：2265 / 2267

页数：3

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