MOLECULAR-BEAM EPITAXIAL GAAS/ALAS SUPERLATTICES IN THE (311)-ORIENTATION

被引：38

作者：

HSU, Y ^{[1
]}

WANG, WI ^{[1
]}

KUAN, TS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.50.4973

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observed flat, smooth heterointerfaces in GaAs/AlAs superlattices grown on GaAs (311)A by molecular-beam epitaxy. In our investigation of GaAs/AlAs superlattice structures along both the [01 $$($) over bar 1] and [($) over bar 233] directions by cross-section transmission-electron microscopy, we found that the heterointerfaces formed in the (311)A orientation are sharp and smooth. This indicates that the GaAs (311)A surface is stable for epitaxial growth. Thus, it is clear that the recently reported occurrence of interface corrugation in the GaAs/AlAs superlattice grown on GaAs (311)A substrates, viewed along the [($) over bar 233] direction, is not intrinsic to the (311) surfaces.

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页码：4973 / 4975

页数：3

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