AMPHOTERIC DOPING OF SI IN INALAS/INGAAS/INP(311)A HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

LI, X ^{[1
]}

WANG, WI ^{[1
]}

CHO, AY ^{[1
]}

SIVCO, DL ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality InAlAs/InGaAs/InP modulation-doped field effect transistor (MODFET) structures were grown using silicon as an n-type dopant on the (311)A orientation for the first time by the planar-doping technique in molecular-beam epitaxy. An electron mobility as high as 50 000 cm2/V s with a sheet carrier concentration of 1.9 X 10(12)/CM2 at 77 K is achieved. MODFETs with 1.2 mum gate length exhibit an extrinsic transconductance of 400 mS/mm and a maximum drain current of 485 mA/mm. The results are comparable to that of MODFETs grown on (100) InP substrates. Our results point to the new possibility of making p-n multilayer structures with all-silicon doping.

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页码：912 / 914

页数：3

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