MOLECULAR-BEAM EPITAXIAL GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON (311)A GAAS SUBSTRATES WITH ALL-SILICON DOPING

被引：9

作者：

LI, WQ

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 01期

关键词：

D O I：

10.1109/55.144941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the characteristics and reproducibility of Si-doped p-type (311)A GaAs layers for application to heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy (MBE). We have obtained p = 2.2 x 10(19) cm-3 in a layer grown at 670-degrees-C. We have used all-Si doping to grow n-p-n transistors. These devices exhibit excellent dc characteristics with beta = 230 in a device with base doping of p = 4 x 10(18) cm-3.

引用

页码：29 / 31

页数：3

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