INFLUENCE OF AS4/GA FLUX RATIO ON BE INCORPORATION IN HEAVILY DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

PAO, YC ^{[1
]}

FRANKLIN, J ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90406-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：301 / 304

页数：4

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[8] SURFACE EFFECT-INDUCED FAST BE DIFFUSION IN HEAVILY DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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