ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：43

作者：

MCLEVIGE, WV

VAIDYANATHAN, KV

STREETMAN, BG

ILEGEMS, M

COMAS, J

PLEW, L

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[4] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[5] USN,CTR WEAPONS SUPPORT,CRANE,IN 47522

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 02期

关键词：

D O I：

10.1063/1.90307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：127 / 129

页数：3

共 20 条

[1]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[2] LUMINESCENCE PROPERTIES OF BE-IMPLANTED GAAS1-XPX (X APPROXIMATELY-EQUAL-TO 0.38) [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3003-3009

[3] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS [J].

CHATTERJEE, PK ;

VAIDYANATHAN, KV ;

MCLEVIGE, WV ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :567-569

[4] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

VAIDYANATHAN, KV ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :509-512

[5] REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES [J].

CHATTERJEE, PK ;

STREETMAN, BG .

SOLID-STATE ELECTRONICS, 1977, 20 (04) :305-&

[6]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[7]

Crank J., 1975, MATH DIFFUSION, VSecond, P414, DOI 10.1016/0306-4549(77)90072-X

[8] UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION [J].

DONNELLY, JP ;

LEONBERGER, FJ ;

BOZLER, CO .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :706-708

[9]

Helix M. J., 1977, 1977 International Electron Devices Meeting, P195, DOI 10.1109/IEDM.1977.189203

[10]

HUBLER GK, UNPUBLISHED

← 1 2 →