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SURFACE EFFECT-INDUCED FAST BE DIFFUSION IN HEAVILY DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
被引:62
作者
:
PAO, YC
论文数:
0
引用数:
0
h-index:
0
PAO, YC
HIERL, T
论文数:
0
引用数:
0
h-index:
0
HIERL, T
COOPER, T
论文数:
0
引用数:
0
h-index:
0
COOPER, T
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1986年
/ 60卷
/ 01期
关键词
:
D O I
:
10.1063/1.337681
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:201 / 204
页数:4
相关论文
共 17 条
[1]
ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES
DINAN, JH
论文数:
0
引用数:
0
h-index:
0
DINAN, JH
GALBRAIT.LK
论文数:
0
引用数:
0
h-index:
0
GALBRAIT.LK
FISCHER, TE
论文数:
0
引用数:
0
h-index:
0
FISCHER, TE
[J].
SURFACE SCIENCE,
1971,
26
(02)
: 587
-
&
[2]
INFLUENCE OF GROWTH TEMPERATURE ON BE INCORPORATION IN MOLECULAR-BEAM EPITAXY GAAS EPILAYERS
DUHAMEL, N
论文数:
0
引用数:
0
h-index:
0
DUHAMEL, N
HENOC, P
论文数:
0
引用数:
0
h-index:
0
HENOC, P
ALEXANDRE, F
论文数:
0
引用数:
0
h-index:
0
ALEXANDRE, F
RAO, EVK
论文数:
0
引用数:
0
h-index:
0
RAO, EVK
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(01)
: 49
-
51
[3]
ENQUIST P, 1984, 3RD INT MBE C SAN FR
[4]
SURFACE MEASUREMENTS ON GALLIUM ARSENIDE
FLINN, I
论文数:
0
引用数:
0
h-index:
0
FLINN, I
BRIGGS, M
论文数:
0
引用数:
0
h-index:
0
BRIGGS, M
[J].
SURFACE SCIENCE,
1964,
2
: 136
-
145
[5]
BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
: 1278
-
1287
[6]
ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
MCLEVIGE, WV
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
MCLEVIGE, WV
VAIDYANATHAN, KV
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
VAIDYANATHAN, KV
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
STREETMAN, BG
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
ILEGEMS, M
COMAS, J
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
COMAS, J
PLEW, L
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
PLEW, L
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(02)
: 127
-
129
[7]
MEAD CA, 1969, OHMIC CONTACTS SEMIC, P1
[8]
MOLL JL, 1964, PHYSICS SEMICONDUCTO, P54
[9]
MULLER RS, 1977, DEVICE ELECTRONICS I, P134
[10]
FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(07)
: 695
-
&
←
1
2
→
共 17 条
[1]
ELECTRONIC PROPERTIES OF CLEAN CLEAVED (110) GAAS SURFACES
DINAN, JH
论文数:
0
引用数:
0
h-index:
0
DINAN, JH
GALBRAIT.LK
论文数:
0
引用数:
0
h-index:
0
GALBRAIT.LK
FISCHER, TE
论文数:
0
引用数:
0
h-index:
0
FISCHER, TE
[J].
SURFACE SCIENCE,
1971,
26
(02)
: 587
-
&
[2]
INFLUENCE OF GROWTH TEMPERATURE ON BE INCORPORATION IN MOLECULAR-BEAM EPITAXY GAAS EPILAYERS
DUHAMEL, N
论文数:
0
引用数:
0
h-index:
0
DUHAMEL, N
HENOC, P
论文数:
0
引用数:
0
h-index:
0
HENOC, P
ALEXANDRE, F
论文数:
0
引用数:
0
h-index:
0
ALEXANDRE, F
RAO, EVK
论文数:
0
引用数:
0
h-index:
0
RAO, EVK
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(01)
: 49
-
51
[3]
ENQUIST P, 1984, 3RD INT MBE C SAN FR
[4]
SURFACE MEASUREMENTS ON GALLIUM ARSENIDE
FLINN, I
论文数:
0
引用数:
0
h-index:
0
FLINN, I
BRIGGS, M
论文数:
0
引用数:
0
h-index:
0
BRIGGS, M
[J].
SURFACE SCIENCE,
1964,
2
: 136
-
145
[5]
BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(03)
: 1278
-
1287
[6]
ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
MCLEVIGE, WV
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
MCLEVIGE, WV
VAIDYANATHAN, KV
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
VAIDYANATHAN, KV
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
STREETMAN, BG
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
ILEGEMS, M
COMAS, J
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
COMAS, J
PLEW, L
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
PLEW, L
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(02)
: 127
-
129
[7]
MEAD CA, 1969, OHMIC CONTACTS SEMIC, P1
[8]
MOLL JL, 1964, PHYSICS SEMICONDUCTO, P54
[9]
MULLER RS, 1977, DEVICE ELECTRONICS I, P134
[10]
FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
PADOVANI, FA
论文数:
0
引用数:
0
h-index:
0
PADOVANI, FA
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(07)
: 695
-
&
←
1
2
→