IMPURITY GRADIENTS CAUSED BY SURFACE-STATES AND SUBSTRATE DOPING IN EPITAXIAL GAAS

被引：16

作者：

WOLFE, CM

NICHOLS, KH

机构：

[1] WASHINGTON UNIV,DEPT ELECT ENGN,ST LOUIS,MO 63130

[2] WASHINGTON UNIV,APPL ELECTR SCI LAB,ST LOUIS,MO 63130

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 05期

关键词：

D O I：

10.1063/1.89698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：356 / 359

页数：4

共 13 条

[1]

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[3]

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[4] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

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[5] ANALYSIS OF IMPURITY DISTRIBUTION IN HOMOEPITAXIAL N ON N+ FILMS OF GAAS WHICH CONTAIN HIGH-RESISTIVITY REGIONS [J].

DILORENZO, JV ;

MARCUS, RB ;

LEWIS, R .

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[6] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

[7] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1125-&

[8]

HILSUM C, 1965, ELECTRON LETT, V6, P178

[9] PROPERTIES OF A HIGH-RESISTIVITY LAYER IN EPITAXIALLY GROWN GALLIUM-ARSENIDE FILM [J].

OKAMOTO, H ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 22 (09) :446-447

[10] CAUSE OF HIGH RESISTANCE REGION AT VAPOUR EPITAXIAL GAAS LAYER SUBSTRATE INTERFACE [J].

SAITO, T ;

HASEGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) :197-&

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