CAUSE OF HIGH RESISTANCE REGION AT VAPOUR EPITAXIAL GAAS LAYER SUBSTRATE INTERFACE

被引：26

作者：

SAITO, T

HASEGAWA, F

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 02期

关键词：

D O I：

10.1143/JJAP.10.197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：197 / &

共 10 条

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[6] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1125-&

[7] RECOMBINATION AND TRAPPING PROCESSES AT DEEP CENTERS IN N-TYPE GAAS [J].

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[8] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J].

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[9]

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[10]

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