KINK-FREE ALLNAS/GAINAS/INP HEMTS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

LUO, LF ^{[1
]}

LONGENBACH, KF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LAB,NEW YORK,NY 10027

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 12期

关键词：

epitaxial growth; Epitaxy; Semiconductor devices and material;

D O I：

10.1049/el:19900508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Kink-free AllnAs/GalnAs/lnP HEMTs have been fabricated from an MBE structure grown under normal growth condition. Devices with 1 fan gate-length exhibit an extrinsic transconductance of 450mS/mm and a maximum drain current of 600mA/mm which represent the best results for I fan gate devices. The DC output conductance shows no kink over the entire gate bias range. The elimination of the kink is attributed to the high quality AlInAs buffer layer and a low mismatch between the AlInAs buffer layer and InP substrate. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：779 / 780

页数：2

共 6 条

[1] A1INAS-GAINAS HEMTS UTILIZING LOW-TEMPERATURE A1INAS BUFFERS GROWN BY MBE [J].