STRUCTURES OF AS-RICH GAAS(001)-(2X4) RECONSTRUCTIONS

被引：279

作者：

HASHIZUME, T

XUE, QK

ZHOU, J

ICHIMIYA, A

SAKURAI, T

机构：

[1] Institute for Materials Research (IMR), Tohoku University

[2] Department of Applied Physics, Nagoya University

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.73.2208

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscope (STM) images together with reflection high-energy electron diffraction (RHEED) showed for the first time convincingly that the molecular-beam epitaxially grown GaAs(001)-(2 x 4) alpha, beta, and gamma phases all have the same outermost surface layer of the unit cell, which consists of two As dimers and two dimer vacancies. Based on the STM and RHEED observations and dynamical RHEED calculation, a structure model consistent with various observations is proposed.

引用

页码：2208 / 2211

页数：4

共 26 条

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