Microwave frequency acoustic resonators implemented on monolithic Si/AlN substrates.

被引：2

作者：

Caliendo, C ^{[1
]}

Verona, E ^{[1
]}

Cimmino, A ^{[1
]}

机构：

[1] CNR, Ist Acust Om Corbino, I-00133 Rome, Italy

来源：

MEMS DESIGN, FABRICATION, CHARACTERIZATION, AND PACKAGING | 2001年 / 4407卷

关键词：

SAW resonators; BAW resonators; AlN; thin films; microwaves;

D O I：

10.1117/12.425331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Basing on the performances of high quality AIN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AIN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.

引用

页码：423 / 430

页数：8

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