Photoluminescence measurements in the phase transition region for CdS thin films
被引:37
作者:
ArizaCalderon, H
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机构:INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
ArizaCalderon, H
LozadaMorales, R
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机构:INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
LozadaMorales, R
ZelayaAngel, O
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机构:INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
ZelayaAngel, O
MendozaAlvarez, JG
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机构:INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
MendozaAlvarez, JG
Banos, L
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机构:INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
Banos, L
机构:
[1] INST POLITECN NACL,CTR INVEST & ESTUDIOS AVANZADOS,DEPT FIS,MEXICO CITY 07000,DF,MEXICO
[2] UNIV NACL AUTONOMA MEXICO,INST INVEST MAT,MEXICO CITY,DF,MEXICO
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
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1996年
/
14卷
/
04期
关键词:
D O I:
10.1116/1.580005
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
CdS polycrystalline thin films were grown by the chemical bath deposition technique at 80 degrees C onto glass substrates. The films grow in the cubic crystalline structure as determined by x-ray diffraction analysis. After thermal annealing in S-2 and Ar atmospheres, the CdS changes from the metastable zinc blende phase to a stable wurtzite one. The cubic-to-hexagonal transition temperature has been determined to be 370 degrees C, as seen by the photoluminescence spectra and the x-ray diffraction patterns of the different samples. These spectra show the well-known green emission band of the CdS centered at 2.4 eV for the as-grown sample, which shifts to 2.25 eV for the sample annealed at 365 degrees C just before the phase transition takes place. For the sample annealed at 374 degrees C, an abrupt blueshift of the green band occurs going back to an energy value of 2.4 eV, when the crystalline phase transition occurs. (C) 1996 American Vacuum Society.