Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD

被引：22

作者：

Chang, Y

Ducroquet, F

Gautier, E

Renault, O

Legrand, J

Damlencourt, JF

Martin, F

机构：

[1] Inst Natl Sci Appl, LPM, F-69621 Villeurbanne, France

[2] CEA, LETI, F-38054 Grenoble 9, France

[3] IMN, CNC, F-44322 Nantes 3, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 72卷 / 1-4期

关键词：

high-k; gate dielectrics; Al2O3; ALD;

D O I：

10.1016/j.mee.2004.01.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of different surface preparation (HF solution cleaned substrate, thermally and chemically oxidized substrates) and post thermal treatment on Al2O3 dielectric properties were investigated. High resolution transmission electron microscopy showed different characteristics of interfacial growth between each surface preparation. Al2O3 films remained amorphous after annealing at 800 degreesC whatever the surface preparation. Angle-resolved X-ray photoelectron spectroscopy revealed that interfacial layer is composed of SiOx and Al-silicate layer. As-deposited Al2O3 film on HF solution cleaned substrate showed higher and more unstable leakage current than those grown on SiO2 layer. However low and stable currents (10(-8)-10(-9) A/cm(2) at -1 V) were obtained for all samples after annealing at 1000 degreesC. The 1-V characteristics measured in various temperatures fitted well with Fowler-Nordheim conduction in high electric field. The interface state density (D-it) was reduced after annealing at 800 degreesC. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：326 / 331

页数：6

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