Atomic-level study of the robustness of the Si(100)-2x1:H surface following exposure to ambient conditions

被引:40
作者
Hersam, MC
Guisinger, NP
Lyding, JW
Thompson, DS
Moore, JS
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
关键词
D O I
10.1063/1.1348322
中图分类号
O59 [应用物理学];
学科分类号
摘要
The in situ hydrogen-passivated Si(100)-2x1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2x1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.). (C) 2001 American Institute of Physics.
引用
收藏
页码:886 / 888
页数:3
相关论文
共 20 条
  • [1] Approaches to nanofabrication on Si(100) surfaces: Selective area chemical vapor deposition of metals and selective chemisorption of organic molecules
    Abeln, GC
    Hersam, MC
    Thompson, DS
    Hwang, ST
    Choi, T
    Moore, JS
    Lyding, JW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3874 - 3878
  • [2] Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning
    Arima, K
    Endo, K
    Kataoka, T
    Oshikane, Y
    Inoue, H
    Mori, Y
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (04) : 463 - 465
  • [3] ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION
    BECKER, RS
    HIGASHI, GS
    CHABAL, YJ
    BECKER, AJ
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (15) : 1917 - 1920
  • [4] SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON
    BENDER, H
    VERHAVERBEKE, S
    CAYMAX, M
    VATEL, O
    HEYNS, MM
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) : 1207 - 1209
  • [5] HYDROGEN PASSIVATION OF HF-LAST CLEANED (100)SILICON SURFACES INVESTIGATED BY MULTIPLE INTERNAL-REFLECTION INFRARED-SPECTROSCOPY
    BENDER, H
    VERHAVERBEKE, S
    HEYNS, MM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (11) : 3128 - 3136
  • [6] INFRARED-SPECTROSCOPY OF SI(111) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
    BURROWS, VA
    CHABAL, YJ
    HIGASHI, GS
    RAGHAVACHARI, K
    CHRISTMAN, SB
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (11) : 998 - 1000
  • [7] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY
    CHABAL, YJ
    HIGASHI, GS
    RAGHAVACHARI, K
    BURROWS, VA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 2104 - 2109
  • [8] MORPHOLOGY OF HYDROGEN-TERMINATED SI(111) AND SI(100) SURFACES UPON ETCHING IN HF AND BUFFERED-HF SOLUTIONS
    DUMAS, P
    CHABAL, YJ
    JAKOB, P
    [J]. SURFACE SCIENCE, 1992, 269 : 867 - 878
  • [9] Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning by scanning tunneling microscopy
    Endo, K
    Arima, K
    Kataoka, T
    Oshikane, Y
    Inoue, H
    Mori, Y
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1853 - 1855
  • [10] IDEAL HYDROGEN TERMINATION OF THE SI-(111) SURFACE
    HIGASHI, GS
    CHABAL, YJ
    TRUCKS, GW
    RAGHAVACHARI, K
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (07) : 656 - 658