Design studies on sensors for the ATLAS Pixel Detector

被引:6
作者
Hügging, F [1 ]
机构
[1] Univ Dortmund, Lehrstuhl Expt Phys 4, D-44221 Dortmund, Germany
关键词
pixel sensor; ATLAS-pixel; silicon sensor; pixel sensor design; p-spray;
D O I
10.1016/S0168-9002(01)01882-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
For the ATLAS Pixel Detector, prototype sensors have been successfully developed. For the sensors design, attention was given to survivability of the harsh LHC radiation environment leading to the need to operate them at several hundreds of volts, while maintaining a good charge collection efficiency, small cell size and minimal multiple scattering. For a cost effective mass production, a bias grid is implemented to test the sensors before assembly under full bias. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:143 / 149
页数:7
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