The ATLAS silicon pixel sensors

被引：73

作者：

Alam, MS

Ciocio, A

Einsweiler, K

Emes, J

Gilchriese, M

Joshi, A

Kleinfelder, S

Marchesini, R

McCormack, F

Milgrome, O

Palaio, N

Pengg, F

Ricardson, J

Zizka, G

Ackers, M

Andreazza, A

Comes, G

Fischer, P

Keil, M

Klasen, V

Kuhl, T

Meuser, S

Ockenfels, W

Raith, B

Treis, J

Wermes, N

Gössling, C

Hügging, F

Wüstenfeld, J

Wunstorf, R

Barberis, D

Beccherle, R

Darbo, G

Gagliardi, G

Gemme, C

Morettini, P

Musico, P

Osculati, B

Parodi, F

Rossi, L

Blanquart, L

Breugnon, P

Calvet, D

Clemens, JC

Delpierre, P

Hallewell, G

Laugier, D

Mouthuy, T

Rozanov, A

Valin, I

机构：

[1] SUNY Albany, Albany, NY 12222 USA

[2] Lawrence Berkeley Natl Lab, Berkeley, CA USA

[3] Univ Calif Berkeley, Berkeley, CA 94720 USA

[4] Univ Bonn, Inst Phys, D-5300 Bonn, Germany

[5] Univ Dortmund, Inst Phys, D-4600 Dortmund, Germany

[6] Dipartimento Fis, I-16146 Genoa, Italy

[7] INFM, Genoa, Italy

[8] Ctr Phys Particules Marseille, Marseille, France

[9] Dipartimento Fis, Milan, Italy

[10] INFM, Milan, Italy

[11] Max Planck Inst Phys, D-80805 Munich, Germany

[12] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[13] Acad Sci Czech Republ, Inst Phys, Prague, Czech Republic

[14] Univ Siegen, Fachbereich Phys, D-5900 Siegen, Germany

[15] Dept Fis, Udine, Italy

[16] Ist Nazl Fis Nucl, Udine, Italy

[17] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[18] Berg Univ Gesamthsch Wuppertal, Fachbereich Phys, Wuppertal, Germany

[19] CERN, CH-1211 Geneva 23, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 456卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(00)00574-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：217 / 232

页数：16

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