The optimum oxidation state of AlOx magnetic tunnel junctions

被引：18

作者：

Gillies, MF

Oepts, W

Kuiper, AET

Coehoorn, R

Tamminga, Y

Snijders, JHM

Bik, WMA

机构：

[1] Philips Res Labs, Eindhoven, Netherlands

[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[3] Philips Ctr Mfg Technol, Eindhoven, Netherlands

[4] Univ Utrecht, Utrecht, Netherlands

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

bias dependence; ERD; magnetoresistance; oxygen content in AlOx; RBS; spin-tunnel junctions;

D O I：

10.1109/20.801062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present results on how both the resistance and the magnetoresistance of magnetic spin-tunnel junctions depend on the oxidation time used to form the AlOx barrier. The bias voltage dependence of junctions with barriers created with different oxidation times is measured and found to be optimal when the oxidation time is chosen to give sufficient oxygen for the barrier to be stoichiometric Al2O3. The oxygen content of the barrier was determined by Rutherford Backscattering Spectrometry and Elastic Recoil Detection.

引用

页码：2991 / 2993

页数：3

共 8 条

[1] ELASTIC RECOIL DETECTION [J].