HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY AND THE ANALYSIS OF VERY THIN SILICON-NITRIDE LAYERS

被引：33

作者：

TAMMINGA, Y

WILLEMSEN, MFC

HABRAKEN, FHPM

KUIPER, AET

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 200卷 / 2-3期

关键词：

D O I：

10.1016/0167-5087(82)90476-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：499 / 504

页数：6

共 10 条

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[2] Chu WK., 1978, BACKSCATTERING SPECT
[3] Feuerstein A., 1978, NUCL INSTR METHODS, V149, P471
[4] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS
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THEETEN, JB
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 404 - 415
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[6] (100) AND (110) SI-SIO2 INTERFACE STUDIES BY MEV ION BACKSCATTERING
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[J]. SURFACE SCIENCE, 1980, 100 (01) : 35 - 42
[7] CALCULATION OF BACKSCATTERING-CHANNELING SURFACE PEAK
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FELDMAN, LC
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[J]. SURFACE SCIENCE, 1978, 77 (03) : 513 - 522
[8] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TECHNIQUES TO NEAR-SURFACE ANALYSIS
WILLIAMS, JS
[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3): : 207 - 217
[9] Ziegler J. F, 1977, HELIUM STOPPING POWE
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