(100) AND (110) SI-SIO2 INTERFACE STUDIES BY MEV ION BACKSCATTERING

被引：61

作者：

JACKMAN, TE ^{[1
]}

MACDONALD, JR ^{[1
]}

FELDMAN, LC ^{[1
]}

SILVERMAN, PJ ^{[1
]}

STENSGAARD, I ^{[1
]}

机构：

[1] UNIV GUELPH,DEPT PHYS,GUELPH N1G 2W1,ONTARIO,CANADA

来源：

SURFACE SCIENCE | 1980年 / 100卷 / 01期

关键词：

D O I：

10.1016/0039-6028(80)90442-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：35 / 42

页数：8

共 13 条

[1] STUDIES OF THE SI-SIO2 INTERFACE BY MEV ION CHANNELING [J].

CHEUNG, NW ;

FELDMAN, LC ;

SILVERMAN, PJ ;

STENSGAARD, I .

APPLIED PHYSICS LETTERS, 1979, 35 (11) :859-861

[2]

Chu W.K., 1978, BACKSCATTERING SPECT, V1st ed., DOI 10.1016/B978-0-12-173850-1.50008-9

[3] LINE-SHAPE EXTRACTION ANALYSIS OF SILICON-OXIDE LAYERS ON SILICON BY CHANNELING EFFECT MEASUREMENTS [J].

CHU, WK ;

LUGUJJO, E ;

MAYER, JW ;

SIGMON, TW .

THIN SOLID FILMS, 1973, 19 (02) :329-337

[4] ANALYSIS OF SURFACE-LAYERS BY CHANNELING TECHNIQUE - BEAM ENERGY-DEPENDENCE [J].

DELLAMEA, G ;

DRIGO, AV ;

LORUSSO, S ;

MAZZOLDI, P ;

YAMAGUCHI, S ;

BENTINI, GG .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :147-150

[5] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].

FELDMAN, LC ;

SILVERMAN, PJ ;

WILLIAMS, JS ;

JACKMAN, TE ;

STENSGAARD, I .

PHYSICAL REVIEW LETTERS, 1978, 41 (20) :1396-1399

[6] SIGNIFICANCE OF CHANNELING SURFACE PEAK IN THIN-FILM ANALYSIS [J].

KAUFFMAN, RL ;

FELDMAN, LC ;

SILVERMAN, PJ ;

ZUHR, RA .

APPLIED PHYSICS LETTERS, 1978, 32 (02) :93-94

[7]

Pantelides ST, 1978, PHYSICS SIO2 ITS INT, P339

[8] STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON [J].

SIGMON, TW ;

CHU, WK ;

LUGUJJO, E ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1974, 24 (03) :105-107

[9] CALCULATION OF BACKSCATTERING-CHANNELING SURFACE PEAK [J].

STENSGAARD, I ;

FELDMAN, LC ;

SILVERMAN, PJ .

SURFACE SCIENCE, 1978, 77 (03) :513-522

[10]

VANDERWEG WF, 1973, RADIAT EFF, V17, P245

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