SIGNIFICANCE OF CHANNELING SURFACE PEAK IN THIN-FILM ANALYSIS

被引：16

作者：

KAUFFMAN, RL ^{[1
]}

FELDMAN, LC ^{[1
]}

SILVERMAN, PJ ^{[1
]}

ZUHR, RA ^{[1
]}

机构：

[1] SUNY ALBANY,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 02期

关键词：

D O I：

10.1063/1.89948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：93 / 94

页数：2

共 10 条

[1]

ANDERSON JU, 1970, PHYS REV, V81, P2063

[2] MONTE CARLO CHANNELING CALCULATIONS [J].

BARRETT, JH .

PHYSICAL REVIEW B, 1971, 3 (05) :1527-&

[3] VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON [J].

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CHIPMAN, DR .

PHYSICAL REVIEW, 1962, 127 (03) :690-&

[4] LINE-SHAPE EXTRACTION ANALYSIS OF SILICON-OXIDE LAYERS ON SILICON BY CHANNELING EFFECT MEASUREMENTS [J].

CHU, WK ;

LUGUJJO, E ;

MAYER, JW ;

SIGMON, TW .

THIN SOLID FILMS, 1973, 19 (02) :329-337

[5] ANALYSIS OF SURFACE-LAYERS BY CHANNELING TECHNIQUE - BEAM ENERGY-DEPENDENCE [J].

DELLAMEA, G ;

DRIGO, AV ;

LORUSSO, S ;

MAZZOLDI, P ;

YAMAGUCHI, S ;

BENTINI, GG .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :147-150

[6] SURFACE SCATTERING FROM W-SINGLE CRYSTALS BY MEV HE+ IONS [J].

FELDMAN, LC ;

KAUFFMAN, RL ;

SILVERMAN, PJ ;

ZUHR, RA ;

BARRETT, JH .

PHYSICAL REVIEW LETTERS, 1977, 39 (01) :38-41

[7]

LINDHARD J, 1965, K DAN VIDENSK SELSK, V34

[8] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].

SCHLIER, RE ;

FARNSWORTH, HE .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926

[9] STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON [J].

SIGMON, TW ;

CHU, WK ;

LUGUJJO, E ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1974, 24 (03) :105-107

[10]

SILVERMAN PR, UNPUBLISHED

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