LINE-SHAPE EXTRACTION ANALYSIS OF SILICON-OXIDE LAYERS ON SILICON BY CHANNELING EFFECT MEASUREMENTS

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] ELECTRICAL PROPERTIES OF ANODICALLY GROWN SILICON DIOXIDE FILMS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 309 - 314

[3] BOGH E, 1973, PERSONAL COMMUNICATI

[4] STUDIES OF SOLID SURFACES WITH 100 KEV 4HE+ AND H+ ION-BEAMS [J]. SURFACE SCIENCE, 1972, 33 (01) : 35 - &

[5] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[6] DAVIES JA, 1967, CAN J PHYS, V45, P407

[7] DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75

[8] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[9] ANODIC OXIDATION AS SECTIONING TECHNIQUE FOR ANALYSIS OF IMPURITY CONCENTRATION PROFILES IN SILICON [J]. THIN SOLID FILMS, 1971, 8 (05) : 359 - &

[10] RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 656 - +

[1] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) : 970 - &

[2] ELECTRICAL PROPERTIES OF ANODICALLY GROWN SILICON DIOXIDE FILMS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 309 - 314

[3] BOGH E, 1973, PERSONAL COMMUNICATI

[4] STUDIES OF SOLID SURFACES WITH 100 KEV 4HE+ AND H+ ION-BEAMS [J]. SURFACE SCIENCE, 1972, 33 (01) : 35 - &

[5] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[6] DAVIES JA, 1967, CAN J PHYS, V45, P407

[7] DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75

[8] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[9] ANODIC OXIDATION AS SECTIONING TECHNIQUE FOR ANALYSIS OF IMPURITY CONCENTRATION PROFILES IN SILICON [J]. THIN SOLID FILMS, 1971, 8 (05) : 359 - &

[10] RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 656 - +