Unit cell of strained GeSi

被引：36

作者：

Woicik, JC

Bouldin, CE

Miyano, KE

King, CA

机构：

[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

[2] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.55.15386

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented.

引用

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页码：15386 / 15389

页数：4

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