Enhancement of green terbium-related photoluminescence from highly doped microporous alumina xerogels in mesoporous anodic alumina

被引:31
作者
Gaponenko, NV [1 ]
Molchan, IS
Sergeev, OV
Thompson, GE
Pakes, A
Skeldon, P
Kudrawiec, R
Bryja, L
Misiewicz, J
Pivin, JC
Hamilton, B
Stepanova, EA
机构
[1] Belarussian State Univ Informat & Radioelect, Minsk, BELARUS
[2] Univ Manchester, Inst Sci & Technol, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
[3] Univ Manchester, Inst Sci & Technol, Dept Phys, Manchester M60 1QD, Lancs, England
[4] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[5] Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
[6] Byelarussian Acad Sci, Inst Gen & Inorgan Chem, Minsk, BELARUS
关键词
D O I
10.1149/1.1429929
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Strong enhancement of green photoluminescence (PL) from microporous alumina xerogels, highly doped with terbium (from 30 to 60 wt % as Tb2O3), is reported. The regular structure of a 30 mm thick, mesoporous anodic alumina layer was exploited for spin-on deposition of the alumina xerogel in a single step. The green PL, associated with predominant D-5(4) --> F-7(5) transitions, along with D-5(4) --> F-7(j), j = 3, 4, 5, 6 transitions of Tb3+, was found to increase with terbium concentration in the alumina xerogel. This effect is attributed to cross-relaxation. The thermal quenching of the green terbium-related emission does not exceed a factor of two within a temperature range from 10 to 300 K for any of the alumina xerogels confined in anodic alumina. Further, such quenching is much reduced with the rise of temperature compared with (i) Tb-doped titania xerogel, (ii) Tb-implanted thermally grown silicon dioxide film, and (iii) Tb-doped alumina xerogels fabricated onto monocrystalline silicon. Thus, the terbium-doped structure comprising alumina xerogel/anodic alumina is proposed as a basis for green room-temperature luminescent images. (C) 2001 The Electrochemical Society.
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页码:H49 / H52
页数:4
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