Hybrid flexible vertical nanoscale diodes prepared at low temperature in large area

被引：18

作者：

Ae, L. ^{[1
]}

Chen, Jie ^{[1
]}

Lux-Steiner, M. Ch ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 47期

关键词：

D O I：

10.1088/0957-4484/19/47/475201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fabrication and operation of hybrid flexible vertical nanoscale diodes are reported. The diodes, formed by n-type ZnO and p-type CuSCN, were embedded in a 6 mu m polymer foil, provided with vertical cylindrical openings of about 100 nm, by using a low temperature solution based electrochemical deposition technique. Electrical measurements show diode function with sound device characteristics at operation temperatures up to 67 degrees C. This heterojunction shows the potential for ZnO based ultraviolet light-emitting diodes.

引用

页数：4

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