Tunneling-enhanced recombination in Cu(In,Ga)Se2 heterojunction solar cells

被引：127

作者：

Rau, U ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.122967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter presents an analytical model for tunneling-enhanced recombination current in the space charge region of semiconductor junctions. We investigate current-voltage characteristics of nn different types of Cu(In, Ga)Se-2-based heterojunction solar cells in a temperature range from 100 to 340 K. The temperature dependence of the saturation current and of the diode ideality factor of these devices are well described by the closed form expressions derived by the present approach. (C) 1999 American Institute of Physics. [S0003-6951(99)05101-3].

引用

页码：111 / 113

页数：3

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