Capacitance-voltage spectroscopy of self assembled ordered arrays of quantum dots

被引：2

作者：

Kouklin, N ^{[1
]}

Bandyopadhyay, S ^{[1
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年

关键词：

D O I：

10.1109/ISCS.2000.947173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compound semiconductor quantum dots, self-assembled into a two-dimensional regimented hexagonal close-packed array, have been studied by capacitance-voltage spectroscopy. The dots were synthesized by electrodepositing a semiconductor in a nanoporous alumite template formed by the anodization of aluminum. The capacitance-voltage characteristic indicates that the dots have n-type carriers and the Fermi level is unpinned. The capacitance traces out the regions of accumulation, depletion and inversion showing that carrier modulation is possible with a gate potential. Thus, these structures are ideally suited for quantum-dot flash memories.

引用

页码：303 / 307

页数：5

共 6 条

[1] Raman spectroscopy of electrochemically self-assembled CdS quantum dots [J].