Raman spectroscopy of electrochemically self-assembled CdS quantum dots

被引：141

作者：

Balandin, A ^{[1
]}

Wang, KL

Kouklin, N

Bandyopadhyay, S

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA

[2] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 02期

关键词：

D O I：

10.1063/1.125681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a Raman spectroscopy investigation of electrochemically self-assembled quasiperiodic arrays of CdS quantum dots with characteristic feature size of 10 nm. The dots were synthesized using electrochemical deposition of CdS into a porous anodized alumina film. Polarization-dependent Raman scattering study over an extended frequency range reveals the quantization of electronic states in the conduction band and intersubband transitions. Raman peaks observed at 2919 and 3050 cm(-1) are attributed to transitions between the lowest two subbands. The results suggest that quantum dot arrays, produced by inexpensive robust electrochemical means, may be suitable for infrared detector applications. (C) 2000 American Institute of Physics. [S0003-6951(00)02202-6].

引用

页码：137 / 139

页数：3

共 16 条

[1] Self-organization of germanium nanoislands obtained in silicon by molecular-beam epitaxy
Aleshkin, VY
Bekin, NA
Kalugin, NG
Krasil'nik, ZF
Novikov, AV
Postnikov, VV
Seyringer, H
[J]. JETP LETTERS, 1998, 67 (01) : 48 - 53
[2] BALANDIN A, 1997, PHYS LOW-DIMENS STR, V11, P155
[3] Electrochemically assembled quasi-periodic quantum dot arrays
Bandyopadhyay, S
Miller, AE
Chang, HC
Banerjee, G
Yuzhakov, V
Yue, DF
Ricker, RE
Jones, S
Eastman, JA
Baugher, E
Chandrasekhar, M
[J]. NANOTECHNOLOGY, 1996, 7 (04) : 360 - 371
[4] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
CAMPBELL, IH
FAUCHET, PM
[J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
[5] Self-assembled quantum dots: five years later
Fafard, S
Wasilewski, ZR
Allen, CN
Picard, D
Piva, PG
McCaffrey, JP
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 87 - 96
[6] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS
KIRSTAEDTER, N
LEDENTSOV, NN
GRUNDMANN, M
BIMBERG, D
USTINOV, VM
RUVIMOV, SS
MAXIMOV, MV
KOPEV, PS
ALFEROV, ZI
RICHTER, U
WERNER, P
GOSELE, U
HEYDENREICH, J
[J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417
[7] Influences of growth conditions on physical, optical properties, and quantum size effects of CdS nanocluster thin films
Lee, J
Tsakalakos, T
[J]. NANOSTRUCTURED MATERIALS, 1997, 8 (04): : 381 - 398
[8] Raman scattering from a self-organized Ge dot superlattice
Liu, JL
Tang, YS
Wang, KL
Radetic, T
Gronsky, R
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1863 - 1865
[9] Intersubband absorption in boron-doped multiple Ge quantum dots
Liu, JL
Wu, WG
Balandin, A
Jin, GL
Wang, KL
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (02) : 185 - 187
[10] Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice
Pan, D
Zeng, YP
Kong, MY
Wu, J
Zhu, YQ
Zhang, CH
Li, JM
Wang, CY
[J]. ELECTRONICS LETTERS, 1996, 32 (18) : 1726 - 1727

← 1 2 →