Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

被引：60

作者：

Pan, D ^{[1
]}

Zeng, YP ^{[1
]}

Kong, MY ^{[1
]}

Wu, J ^{[1
]}

Zhu, YQ ^{[1
]}

Zhang, CH ^{[1
]}

Li, JM ^{[1
]}

Wang, CY ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 10080,PEOPLES R CHINA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 18期

关键词：

infrared detectors; semiconductor quantum dots; semiconductor superlattices;

D O I：

10.1049/el:19961135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report for the first time, normal incident infrared absorption around the wavelength of 13-15 mu m from a 20 period InGaAs/GaAs quantum dot supperlatice (QDS). The structure of a QDS has been-confirmed by cross-section transmission electron microscopy (TEM) and by a photoluminescence spectrum (PL). This opens the way to high performance 8-14 mu m quantum dot infrared detectors.

引用

页码：1726 / 1727

页数：2

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