Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy

被引:70
作者
Naranjo, FB
Sánchez-García, MA
Calle, F
Calleja, E
Jenichen, B
Ploog, KH
机构
[1] Univ Politecn Madrid, ETSI Telecomunicac, ISOM, E-28040 Madrid, Spain
[2] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain
[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
关键词
D O I
10.1063/1.1432751
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of the III/V ratio and growth temperature on the In incorporation has been studied in thick (>300 nm) InGaN layers, with In mole fractions from 19% to 37%, grown by molecular-beam epitaxy on sapphire and on GaN templates. Significant desorption of In occurs at growth temperatures above 550 degreesC. Symmetric and asymmetric reflections from high resolution X-ray diffraction reveals that the layers are not fully relaxed. A bowing parameter of 3.6 eV is calculated from optical absorption data, once corrected for strain-free band gap values. The increase of both, the absorption band-edge broadening and the photoluminescence full width at half maximum at room temperature with the In content, is discussed in terms of a strong In localization effect. This localization effect is further evidenced by the S-shaped temperature dependence of the emission energy. (C) 2002 American Institute of Physics.
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页码:231 / 233
页数:3
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