GW quasiparticle band structures of stibnite, antimonselite, bismuthinite, and guanajuatite

被引:184
作者
Filip, Marina R. [1 ]
Patrick, Christopher E. [1 ]
Giustino, Feliciano [1 ]
机构
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
基金
英国工程与自然科学研究理事会;
关键词
CHEMICALLY DEPOSITED SB2S3; SENSITIZED-SOLAR-CELL; OPTICAL-PROPERTIES; ELECTRONIC-STRUCTURE; THIN-FILMS; DIELECTRIC-CONSTANT; CRYSTAL-STRUCTURE; GREENS-FUNCTION; BI2S3; SELENIDE;
D O I
10.1103/PhysRevB.87.205125
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present first-principles calculations of the quasiparticle band structures of four isostructural semiconducting metal chalcogenides A(2)B(3) (with A = Sb, Bi and B = S, Se) of the stibnite family within the G(0)W(0) approach. We perform extensive convergence tests and identify a sensitivity of the quasiparticle corrections to the structural parameters and to the semicore d electrons. Our calculations indicate that all four chalcogenides exhibit direct band gaps, if we exclude some indirect transitions marginally below the direct gap. Relativistic spin-orbit effects are evaluated for the Kohn-Sham band structures, and included as scissor corrections in the quasiparticle band gaps. Our calculated band gaps are 1.5 eV (Sb2S3), 1.3 eV (Sb2Se3), 1.4 eV (Bi2S3), and 0.9 eV (Bi2Se3). By comparing our calculated gaps with the ideal Shockley-Queisser value we find that all four chalcogenides are promising as light sensitizers for nanostructured photovoltaics.
引用
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页数:11
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