Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range

被引：44

作者：

Chen, SB ^{[1
]}

Lai, CH

Chan, KT

Chin, A

Hsieh, JC

Liu, J

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] United Microelect Corp, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 04期

关键词：

dielectric constant; frequency dependence; high k; loss tangent; RF;

D O I：

10.1109/55.992839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.

引用

页码：203 / 205

页数：3

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