Film formation by motion control of ionized precursors in electric field

A chemical vapor deposition (CVD) method, called ionization CVD, in which ionized source molecules were deposited on a substrate by Coulombic force, was developed to control gas-phase reaction and film morphology. This method was applied to the tetraethylorthosilicate (TEOS)/ozone-atmospheric pressure chemical vapor deposition process by using the surface corona discharge. TEOS/O-3 films deposited on SiN and SiO2 films by this CVD method showed good properties for the flow shape, the gap filling and the surface morphology. In Fourier-transform infrared spectra of gas-phase intermediates collected in the vapor condenser, the intensity of the absorption peak at 600 cm-1 was different between ionized intermediates and nonionized intermediates. (C) 1999 American Institute of Physics. [S0003-6951(99)04639-2].