FILM FORMATION BY A NEW CHEMICAL-VAPOR-DEPOSITION PROCESS USING IONIZATION OF TETRAETHYLORTHOSILICATE

被引：6

作者：

ADACHI, M ^{[1
]}

OKUYAMA, K ^{[1
]}

FUJIMOTO, T ^{[1
]}

机构：

[1] HIROSHIMA UNIV, DEPT CHEM ENGN, HIGASHIHIROSHIMA 739, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期

关键词：

ATMOSPHERIC-PRESSURE CVD; SILICON DIOXIDE; FILM FORMATION; TEOS; TETRAETHYLORTHOSILICATE; IONIZATION; ELECTROPHORESIS; NANOMETER-SIZED PARTICLES;

D O I：

10.1143/JJAP.34.L1148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new chemical vapor deposition (CVD) method called ionization CVD, where source molecules were ionized and deposited on a substrate by Coulombic forces in an electric field, was proposed. Film formation from tetraethylorthosilicate (TEOS)/ozone CVD was used to demonstrate this method. Film-growth rates increased linearly with increasing electric fields from 0 to 1.67 kV . cm(-1). The FT-IR spectra of the resulting films showed they were composed of SiO2. It was found that 60% of the intermediates had a negative charge and that the electric field required to deposit them was lower than 1.67 kV . cm(-1).

引用

页码：L1148 / L1150

页数：3

共 3 条

[1] PARTICLE GENERATION AND FILM FORMATION IN AN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR USING THE TETRAETHYLORTHOSILICATE (TEOS)/HE, TEOS/O2/HE, AND TEOS/O3/HE SYSTEMS [J].

ADACHI, M ;

OKUYAMA, K ;

TOHGE, N ;

SHIMADA, M ;

SATO, J ;

MUROYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (5B) :L748-L751

[2] PRECURSORS IN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICA FILMS FROM TETRAETHYLORTHOSILICATE OZONE SYSTEM [J].

ADACHI, M ;

OKUYAMA, K ;

TOHGE, N ;

SHIMADA, M ;

SATO, J ;

MUROYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (3B) :L447-L450

[3]

ADACHI M, 1994, J AEROSOL RES JPN, V9, P321

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