PRECURSORS IN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICA FILMS FROM TETRAETHYLORTHOSILICATE OZONE SYSTEM

被引：14

作者：

ADACHI, M

OKUYAMA, K

TOHGE, N

SHIMADA, M

SATO, J

MUROYAMA, M

机构：

[1] SONY CORP,ULSI R&D GRP,DEPT PROC TECHNOL,ATSUGI,KANAGAWA 243,JAPAN

[2] KINKI UNIV,DEPT MET ENGN,OSAKA,OSAKA 577,JAPAN

[3] HIROSHIMA UNIV,DEPT CHEM ENGN,HIROSHIMA 724,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3B期

关键词：

ATMOSPHERIC-PRESSURE CVD; FLOW-LIKE SHAPE; INTERLAYER DIELECTRIC; NANOMETER-SIZED PARTICLE; OZONE; PLANARIZATION; SILICON DIOXIDE; TEOS; TETRAETHYLORTHOSILICATE; ULSI;

D O I：

10.1143/JJAP.33.L447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to clarify the mechanisms of film formation in an atmospheric-pressure chemical vapor deposition reactor using the tetraethylorthosificate/O3/He system, the contents of C, H, and SiO2 in the intermediate species were estimated from both CHN elemental chemical component and thermogravimetric analyses of simultaneously generated nanometer-sized particles. From the results of compositional analysis of intermediate species and SEM observation of resultant films, the intermediate species which form films with excellent flow-like shape were found to contain relatively large amounts of ethoxy group and small amounts of hydroxyl group.

引用

页码：L447 / L450

页数：4

共 5 条

[1] PARTICLE GENERATION AND FILM FORMATION IN AN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR USING THE TETRAETHYLORTHOSILICATE (TEOS)/HE, TEOS/O2/HE, AND TEOS/O3/HE SYSTEMS [J].