FILM CHARACTERISTICS OF APCVD OXIDE USING ORGANIC SILICON AND OZONE

被引：48

作者：

MATSUURA, M

HAYASHIDE, Y

KOTANI, H

ABE, H

机构：

[1] LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, 664

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; INTERLAYER DIELECTRIC; MULTILEVEL INTERCONNECTION; ORGANIC SILICON-OZONE CHEMISTRY; OMCTS; TEOS; POLYMERIZATION; EXCELLENT STEP COVERAGE;

D O I：

10.1143/JJAP.30.1530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Film characteristics of APCVD oxide using octamethylcyclo tetrasiloxane (OMCTS) and O3 (AP-OMCTS oxide) have been investigated minutely for applications to advanced VLSI devices. Deposition characteristics of AP-OMCTS oxide strongly depend on depostion temperature and high quality films can be formed by increasing the deposition temperature. The step coverage shows a most smooth "flowing profile" around at 425-degrees-C. The dependence of the deposition characteristics on O3 concentration can not be observed in contrast with the deposition characteristics of AP-TEOS oxide which evidently depend on the O3 concentration. From these results, it is supposed that CVD reactions based on OMCTS-O3 chemistry consist of the precursor production correspond to CH3 elimination reaction with O radicals and the subsequent polymerization (dehydration) caused by thermal energy provided from hot substrate.

引用

页码：1530 / 1538

页数：9

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