Intraband hole burning of colloidal quantum dots

被引:44
作者
Shim, M [1 ]
Guyot-Sionnest, P [1 ]
机构
[1] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
关键词
D O I
10.1103/PhysRevB.64.245342
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CdSe, InP, and ZnO colloidal quantum dots of 1.5-2.5 nm radius show <3 meV homogeneous width at 10 K for the midinfrared 1 S-e- 1 P-e intraband transition around 300 meV. A weak temperature dependence leads to a homogeneous width of less than 10 meV at 200 K for 2.3 nm radius CdSe. The strength of the LO-phonon replica is in quantitative agreement with expectations from bulk parameters.
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页数:4
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